inchange semiconductor isc product specification isc silicon npn power transistor MJ12005 description collector-emitter voltage- v cex = 1500v safe operation area applications designed for use in deflection circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit v cex collector-emitter voltage 1500 v v ebo emitter-base voltage 5 v i c collector current-continuous 8 a i b b base current-continuous 4 a i e emitter current-continuous 12 a p c collector power dissipation@t c =25 100 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJ12005 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =50ma ; i b =0 b 750 v v ce (sat) collector-emitter saturation voltage i c =5a; i b =1a 5.0 v v be (sat) base-emitter saturation voltage i c =5a; i b =1a 1.5 v i ces collector cutoff current v ce = 1500v; v be = 0 0 25 ma i ebo emitter cutoff current v eb = 5v; i c =0 0 1 ma h fe dc current gain i c = 0.5a ; v ce = 5v 12 t f fall time i c =5a , i b1 =1a; l b =8 h 0.4 1.0 s isc website www.iscsemi.cn 2
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